Recently, the KAUST research team in Saudi Arabia has developed a AlGaN nano luminescent device. The researchers have made the nanoscale GRINSCH dipole by using the gradient refractive index distribution (GRINSCH) device to make the nanoscale dipole. The researchers expect to be able to apply it to the UV LED device in the future, such as laser, optical sensor, amplitude modulator, and the optical related devices of the product.
Image source: KAUST official network
The existing AlGaN light emitting device is regarded as the UV lamp source to replace the existing UV gas laser and the UV lamp containing toxic substances. However, due to the UV laser diode in the device, the voltage is at least 25 volts, and the efficiency of the injection layer is not good, which leads to high series resistance, which leads to limited performance. The reason is related to the P type semiconductor coating on the AlGaN aluminum layer and the lack of effective cooling pipes.
Compared with the original AlGaN epitaxial thin film layer, the nanocrystalline AlGaN has an effective stress relaxation due to the high surface area to the volume ratio, which can be extended directly on the matrix including the metal. Metal and metal matrix coated with silicon or sapphire can provide a better heat sink for high current operation. In addition, because of the low demand for the activation energy of nanoscale P semiconductor because of the addition of magnesium, the resistance is relatively small. The research team has proved that the GRINSCH diodes are excellent in electronic and optical performance, and the required voltage and series resistance are lower than those of the original diodes.